The 300-mm Primo D-RIE™ system leverages a twin-station mini-batch cluster architecture with a single-wafer environment and patented VHF de-coupled RIE plasma source designed to provide fine critical dimension control, high selectivity to mask, wide process window, and robust and repeatable performance for critical and other dielectric etch applications at nodes of 65-45 nm and beyond.

The applications include: VHAR, hard mask open, spacer, dual damascene via and trench etches, among many others.